SQJA46EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 60A PPAK SO-8
$0.69
Available to order
Reference Price (USD)
3,000+
$0.57072
6,000+
$0.54392
15,000+
$0.52478
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SQJA46EP-T1_GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SQJA46EP-T1_GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IPB80P04P4L06ATMA2
Alpha & Omega Semiconductor Inc.
AOTF8N65
Vishay Siliconix
SIRA18ADP-T1-GE3
Diodes Incorporated
DMP2039UFDE-7
Vishay Siliconix
SI7190DP-T1-GE3
Infineon Technologies
IPB80P03P4L04ATMA2
Infineon Technologies
IPL60R365P7AUMA1
Vishay Siliconix
SIHP25N50E-GE3
Central Semiconductor Corp
CWDM3011P TR13 PBFREE
Rohm Semiconductor