G3R20MT17N
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 100A SOT227
$143.58
Available to order
Reference Price (USD)
1+
$143.58000
500+
$142.1442
1000+
$140.7084
1500+
$139.2726
2000+
$137.8368
2500+
$136.401
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose G3R20MT17N by GeneSiC Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with G3R20MT17N inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 15mA
- Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 523W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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