IPTG018N08NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOG-8
$2.98
Available to order
Reference Price (USD)
1+
$2.97600
500+
$2.94624
1000+
$2.91648
1500+
$2.88672
2000+
$2.85696
2500+
$2.8272
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with IPTG018N08NM5ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IPTG018N08NM5ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 253A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 159µA
- Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 231W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSFN
Related Products
onsemi
NTNS41006PZTCG
Goford Semiconductor
G1003B
Fairchild Semiconductor
FDP039N08B
Micro Commercial Co
MCG35P04-TP
Infineon Technologies
IRFPS37N50APBF
Micro Commercial Co
MCAC90N04-TP
Vishay Siliconix
SIHA6N80AE-GE3
Infineon Technologies
IGLD60R190D1SAUMA1
Diodes Incorporated
DMP3017SFV-13
onsemi