G3R160MT17J
GeneSiC Semiconductor
GeneSiC Semiconductor
SIC MOSFET N-CH 22A TO263-7
$13.75
Available to order
Reference Price (USD)
1+
$13.75000
500+
$13.6125
1000+
$13.475
1500+
$13.3375
2000+
$13.2
2500+
$13.0625
Exquisite packaging
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GeneSiC Semiconductor presents G3R160MT17J, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, G3R160MT17J delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
- Vgs(th) (Max) @ Id: 2.7V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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