R6530ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 30A TO-247, LOW-NOISE POWER
$7.18
Available to order
Reference Price (USD)
1+
$7.18000
500+
$7.1082
1000+
$7.0364
1500+
$6.9646
2000+
$6.8928
2500+
$6.821
Exquisite packaging
Discount
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Boost your electronic applications with R6530ENZ4C13, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, R6530ENZ4C13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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