BUK96180-100A,118
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 11A D2PAK
$0.27
Available to order
Reference Price (USD)
800+
$0.49521
1,600+
$0.44748
2,400+
$0.41765
5,600+
$0.39677
20,000+
$0.38185
Exquisite packaging
Discount
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Discover high-performance BUK96180-100A,118 from NXP USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BUK96180-100A,118 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 173mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 619 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 54W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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