G3R12MT12K
GeneSiC Semiconductor
GeneSiC Semiconductor
1200V 12M TO-247-4 G3R SIC MOSFE
$69.18
Available to order
Reference Price (USD)
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$69.18000
500+
$68.4882
1000+
$67.7964
1500+
$67.1046
2000+
$66.4128
2500+
$65.721
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Discover G3R12MT12K, a versatile Transistors - FETs, MOSFETs - Single solution from GeneSiC Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
- Vgs(th) (Max) @ Id: 2.7V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 567W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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