TK16J60W5,S1VQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$4.96
Available to order
Reference Price (USD)
1+
$4.96000
500+
$4.9104
1000+
$4.8608
1500+
$4.8112
2000+
$4.7616
2500+
$4.712
Exquisite packaging
Discount
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Optimize your electronic systems with TK16J60W5,S1VQ, a high-quality Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TK16J60W5,S1VQ provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 790µA
- Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 130W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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