PMT760EN,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 100V 900MA SOT223
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with PMT760EN,115, a high-quality Transistors - FETs, MOSFETs - Single from NXP USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, PMT760EN,115 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 800mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 80 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 6.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-73
- Package / Case: TO-261-4, TO-261AA
Related Products
onsemi
MCH6321-TL-E
Diodes Incorporated
DMPH4015SSS-13
onsemi
FDMS5352
onsemi
CPH3455-TL-W
onsemi
FDWS86068-F085
Fairchild Semiconductor
RFP45N06
NXP USA Inc.
BUK7628-100A,118
Toshiba Semiconductor and Storage
TK6R7A10PL,S4X
Alpha & Omega Semiconductor Inc.
AONS66966
Vishay Siliconix