G10N10A
Goford Semiconductor
Goford Semiconductor
N100V,RD(MAX)130mOHM@10V,TO-252
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
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Experience the power of G10N10A, a premium Transistors - FETs, MOSFETs - Single from Goford Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, G10N10A is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 130mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 28W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252 (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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