TPN6R303NC,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 30V 20A 8TSON-ADV
$0.35
Available to order
Reference Price (USD)
3,000+
$0.32045
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover TPN6R303NC,LQ, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 19W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
Related Products
IXYS
IXTA48P05T-TRL
Diodes Incorporated
DMN3023L-13
Toshiba Semiconductor and Storage
SSM6K504NU,LF
Vishay Siliconix
SI7390DP-T1-GE3
Infineon Technologies
IPP100N08N3GXKSA1
Fairchild Semiconductor
FDS6680
Rohm Semiconductor
R6547ENZ4C13
Renesas Electronics America Inc
NP60N04VDK-E1-AY
Alpha & Omega Semiconductor Inc.
AOTF409
Toshiba Semiconductor and Storage