TW070J120B,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
SICFET N-CH 1200V 36A TO3P
$33.97
Available to order
Reference Price (USD)
1+
$33.97000
500+
$33.6303
1000+
$33.2906
1500+
$32.9509
2000+
$32.6112
2500+
$32.2715
Exquisite packaging
Discount
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TW070J120B,S1Q by Toshiba Semiconductor and Storage is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, TW070J120B,S1Q ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 20V
- Vgs(th) (Max) @ Id: 5.8V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
- Vgs (Max): ±25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 800 V
- FET Feature: Standard
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
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