IXTA36N30P
IXYS
IXYS
MOSFET N-CH 300V 36A TO263
$5.03
Available to order
Reference Price (USD)
1+
$3.47000
50+
$2.79000
100+
$2.54200
500+
$2.05840
1,000+
$1.73600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXTA36N30P, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXTA36N30P delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AA
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIHG25N40D-GE3
Infineon Technologies
IRF7403TRPBF
Vishay Siliconix
SQJ860EP-T1_BE3
onsemi
FCPF099N65S3
Infineon Technologies
IRFS7730TRL7PP
Vishay Siliconix
IRFR9110PBF
Infineon Technologies
IPD70P04P4L08ATMA2
NXP USA Inc.
BUK9615-100E,118
Micro Commercial Co
BSS84-TP
Nexperia USA Inc.