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FQP19N20C

onsemi
FQP19N20C Preview
onsemi
MOSFET N-CH 200V 19A TO220-3
$1.75
Available to order
Reference Price (USD)
1+
$1.71000
10+
$1.51700
100+
$1.19870
500+
$0.92964
1,000+
$0.73392
Exquisite packaging
Discount
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Specifications

  • Product Status: Last Time Buy
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 170mOhm @ 9.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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