BSC196N10NSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 8.5A/45A TDSON
$1.46
Available to order
Reference Price (USD)
5,000+
$0.48177
10,000+
$0.46365
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BSC196N10NSGATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSC196N10NSGATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19.6mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 4V @ 42µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
Microchip Technology
APT50M65JFLL
NTE Electronics, Inc
NTE464
Infineon Technologies
IPP65R660CFD
Rectron USA
RM25P30S8
Infineon Technologies
BSC884N03MSG
Vishay Siliconix
SI4423DY-T1-E3
onsemi
2N7002LT3G
IXYS
IXFP72N30X3
onsemi
NTB65N02RT4G
onsemi