FQB11N40CTM
onsemi
onsemi
MOSFET N-CH 400V 10.5A D2PAK
$2.72
Available to order
Reference Price (USD)
800+
$0.95276
1,600+
$0.87822
2,400+
$0.82089
5,600+
$0.79222
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
FQB11N40CTM by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, FQB11N40CTM ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 530mOhm @ 5.25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1090 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 135W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Microchip Technology
APL602LG
NXP Semiconductors
PSMN085-150K,518
IXYS
IXTH2N170D2
Infineon Technologies
IRFS7537TRLPBF
GeneSiC Semiconductor
G3R40MT12J
STMicroelectronics
STD25NF20
STMicroelectronics
STW13N80K5
Rohm Semiconductor
RMW200N03TB
Fairchild Semiconductor
HUF75842P3
Taiwan Semiconductor Corporation