FP50R07N2E4_B11
Infineon Technologies
Infineon Technologies
FP50R07 - IGBT MODULE
$65.89
Available to order
Reference Price (USD)
1+
$65.89000
500+
$65.2311
1000+
$64.5722
1500+
$63.9133
2000+
$63.2544
2500+
$62.5955
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FP50R07N2E4_B11 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: -
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Renesas Electronics America Inc
RJP6065DPE-00#J3
Infineon Technologies
FS50R06KE3
Harris Corporation
HGTH12N50CID
onsemi
TIG064E8-TL-H-ON
IXYS
IXYP20N65C3
Rohm Semiconductor
RGW00TS65DHRC11
Renesas Electronics America Inc
RJH60M2DPE-00#J3
IXYS
IXXH30N60C3
IXYS
IXYQ30N65B3D1
Harris Corporation