FGY75N60SMD
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
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Reference Price (USD)
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$6.48000
10+
$5.86900
450+
$4.68751
900+
$4.29376
1,350+
$3.76875
Exquisite packaging
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The FGY75N60SMD Single IGBT by Fairchild Semiconductor sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Fairchild Semiconductor for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
- Power - Max: 750 W
- Switching Energy: 2.3mJ (on), 770µJ (off)
- Input Type: Standard
- Gate Charge: 248 nC
- Td (on/off) @ 25°C: 24ns/136ns
- Test Condition: 400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PowerTO-247-3
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