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FGD3N60LSDTM-T

onsemi
FGD3N60LSDTM-T Preview
onsemi
INTEGRATED CIRCUIT
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Specifications

  • Product Status: Obsolete
  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 25 A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
  • Power - Max: 40 W
  • Switching Energy: 250µJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 12.5 nC
  • Td (on/off) @ 25°C: 40ns/600ns
  • Test Condition: 480V, 3A, 470Ohm, 10V
  • Reverse Recovery Time (trr): 234 ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA

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