SKB06N60HSATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 12A 68W TO263-3
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Upgrade your power electronics with SKB06N60HSATMA1 Single IGBTs by Infineon Technologies, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust Infineon Technologies for top-quality components that meet global standards. Request a quote now to learn more about how SKB06N60HSATMA1 can enhance your projects.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 6A
- Power - Max: 68 W
- Switching Energy: 190µJ
- Input Type: Standard
- Gate Charge: 33 nC
- Td (on/off) @ 25°C: 11ns/196ns
- Test Condition: 400V, 6A, 50Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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