FF600R17KE3B2S1NOSA1
Infineon Technologies
Infineon Technologies
FF600R17 - INSULATED GATE BIPOLA
$644.86
Available to order
Reference Price (USD)
1+
$644.86000
500+
$638.4114
1000+
$631.9628
1500+
$625.5142
2000+
$619.0656
2500+
$612.617
Exquisite packaging
Discount
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Experience superior performance with FF600R17KE3B2S1NOSA1 from Infineon Technologies, a key player in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single provide high gain and low power consumption, ideal for battery-operated devices. Versatile and dependable, FF600R17KE3B2S1NOSA1 is suited for a variety of electronic applications. Don't wait reach out now for more information and pricing options.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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