2N3879A
Microchip Technology
Microchip Technology
POWER BJT
$23.43
Available to order
Reference Price (USD)
1+
$23.43000
500+
$23.1957
1000+
$22.9614
1500+
$22.7271
2000+
$22.4928
2500+
$22.2585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose 2N3879A by Microchip Technology for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, 2N3879A is a versatile solution. Ready to order? Submit your inquiry today and let Microchip Technology provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 7 A
- Voltage - Collector Emitter Breakdown (Max): 75 V
- Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
- Current - Collector Cutoff (Max): 25mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
- Power - Max: 35 W
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66 (TO-213AA)
Related Products
Microchip Technology
2N3585P
Microchip Technology
2C3741-MSCL
onsemi
2SC4521S-TD-E
Fairchild Semiconductor
2SC5200RTU
onsemi
2SC3954E
Microchip Technology
MNS2N3637UB
Microchip Technology
JANS2N2907AUBC
onsemi
FP210-TL-E
Microchip Technology
2N5970
Microchip Technology