FDS2582
onsemi
onsemi
MOSFET N-CH 150V 4.1A 8SOIC
$1.32
Available to order
Reference Price (USD)
2,500+
$0.54328
5,000+
$0.51762
12,500+
$0.49928
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FDS2582 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FDS2582 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
IXYS
IXTP24N65X2M
Renesas Electronics America Inc
2SK1526-E
Vishay Siliconix
IRF710SPBF
IXYS
IXTA76N25T-TRL
Vishay Siliconix
IRFR9120PBF
Vishay Siliconix
SIHA25N50E-GE3
IXYS Integrated Circuits Division
CPC3703CTR
Infineon Technologies
IPD60R600PFD7SAUMA1
Toshiba Semiconductor and Storage
TPN7R504PL,LQ
Fairchild Semiconductor