TPN7R504PL,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 38A 8TSON
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance TPN7R504PL,LQ from Toshiba Semiconductor and Storage, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, TPN7R504PL,LQ delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta), 61W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
Related Products
Fairchild Semiconductor
FDP5N60NZ
Fairchild Semiconductor
HUFA75637P3
Nexperia USA Inc.
PSMN4R0-30YLDX
Vishay Siliconix
SI4626ADY-T1-GE3
onsemi
FDMS8018
NXP USA Inc.
PMN25EN,115
Nexperia USA Inc.
BUK7D36-60EX
Texas Instruments
CSD19532KTTT
Infineon Technologies
SPA15N60C3XKSA1
Toshiba Semiconductor and Storage