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BSP100,135

NXP Semiconductors
BSP100,135 Preview
NXP Semiconductors
NEXPERIA BSP100 - 3.5A, 30V, 0.1
$0.19
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$0.1881
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$0.1862
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$0.1843
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$0.1824
2500+
$0.1805
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Tc)
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA

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