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FDP2D3N10C

onsemi
FDP2D3N10C Preview
onsemi
MOSFET N-CH 100V 222A TO220-3
$6.76
Available to order
Reference Price (USD)
800+
$3.71745
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 222A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11180 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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