NTHL160N120SC1
onsemi
onsemi
SICFET N-CH 1200V 17A TO247-3
$8.41
Available to order
Reference Price (USD)
1+
$8.41000
500+
$8.3259
1000+
$8.2418
1500+
$8.1577
2000+
$8.0736
2500+
$7.9895
Exquisite packaging
Discount
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onsemi presents NTHL160N120SC1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTHL160N120SC1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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