FDP050AN06A0
onsemi
onsemi
MOSFET N-CH 60V 18A/80A TO220-3
$3.15
Available to order
Reference Price (USD)
1+
$3.07000
10+
$2.77100
100+
$2.22700
500+
$1.73212
1,000+
$1.43518
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FDP050AN06A0, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FDP050AN06A0 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 245W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Rectron USA
RM1002
IXYS
IXFX140N30P
onsemi
ATP602-TL-H
Infineon Technologies
AUIRFZ44NSTRL
IXYS
IXTP05N100
STMicroelectronics
STP26N65DM2
onsemi
NTD3817N-1G
Renesas Electronics America Inc
2SK1968-E
IXYS
IXFH34N50P3
Toshiba Semiconductor and Storage