DMN2022UFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 7.9A 6UDFN
$0.14
Available to order
Reference Price (USD)
10,000+
$0.15199
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMN2022UFDF-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN2022UFDF-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
Related Products
Infineon Technologies
IPA70R600P7SXKSA1
Nexperia USA Inc.
PSMN5R8-40YS,115
STMicroelectronics
STD46P4LLF6
Alpha & Omega Semiconductor Inc.
AOT12N50
Vishay Siliconix
SQJA78EP-T1_GE3
IXYS
IXTY44N10T
STMicroelectronics
STWA70N60DM6
Infineon Technologies
IPD22N08S2L50ATMA1
Infineon Technologies
BSL207SPH6327XTSA1
Diodes Incorporated