FDN86501LZ
onsemi
onsemi
MOSFET N-CH 60V 2.6A SUPERSOT3
$2.17
Available to order
Reference Price (USD)
3,000+
$0.67960
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDN86501LZ, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDN86501LZ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FCP190N60-GF102
onsemi
FDB0165N807L
Diodes Incorporated
DMN62D0UWQ-7
EPC
EPC2045
Infineon Technologies
IPP60R160C6XKSA1
Vishay Siliconix
SI4408DY-T1-GE3
IXYS
IXTH11P50
Vishay Siliconix
SIHG080N60E-GE3
Rohm Semiconductor
R6507KNXC7G
Vishay Siliconix