NVMFS6H864NWFT1G
onsemi
onsemi
MOSFET N-CH 80V 6.7A/21A 5DFN
$1.07
Available to order
Reference Price (USD)
1+
$1.07000
500+
$1.0593
1000+
$1.0486
1500+
$1.0379
2000+
$1.0272
2500+
$1.0165
Exquisite packaging
Discount
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Boost your electronic applications with NVMFS6H864NWFT1G, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NVMFS6H864NWFT1G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case: 8-PowerTDFN, 5 Leads
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