FDMS8350L
Fairchild Semiconductor
Fairchild Semiconductor
FDMS8350L - N-CHANNEL POWERTRENC
$2.55
Available to order
Reference Price (USD)
3,000+
$2.66266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDMS8350L by Fairchild Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDMS8350L inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 290A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.85mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 242 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 17500 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power56
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTDV20P06LT4G-VF01
Diodes Incorporated
DMN10H220LFDF-7
Fairchild Semiconductor
FDMC7680
onsemi
NTMFS4C810NAT3G
Harris Corporation
IRFD210
Renesas Electronics America Inc
2SK2111-T2-AZ
Infineon Technologies
IPN70R1K5CEATMA1
Diodes Incorporated
DMTH6006SPS-13
Renesas Electronics America Inc
2SK2934-92-E
GeneSiC Semiconductor