DMTH6006SPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V PWRDI5060
$0.42
Available to order
Reference Price (USD)
1+
$0.42211
500+
$0.4178889
1000+
$0.4136678
1500+
$0.4094467
2000+
$0.4052256
2500+
$0.4010045
Exquisite packaging
Discount
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DMTH6006SPS-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMTH6006SPS-13 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.94W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
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