FDMS4D0N12C
onsemi
onsemi
MOSFET N-CH 120V 18.5A/114A 8QFN
$5.43
Available to order
Reference Price (USD)
3,000+
$3.15467
Exquisite packaging
Discount
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Experience the power of FDMS4D0N12C, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDMS4D0N12C is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
- Vgs(th) (Max) @ Id: 4V @ 370A
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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