SIRA99DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 30V 47.9A/195A PPAK
$2.87
Available to order
Reference Price (USD)
1+
$2.87000
500+
$2.8413
1000+
$2.8126
1500+
$2.7839
2000+
$2.7552
2500+
$2.7265
Exquisite packaging
Discount
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Upgrade your electronic designs with SIRA99DP-T1-GE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIRA99DP-T1-GE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): +16V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
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