FDMS0310AS
onsemi
onsemi
MOSFET N-CH 30V 19A/22A 8PQFN
$0.45
Available to order
Reference Price (USD)
3,000+
$0.50612
6,000+
$0.48221
15,000+
$0.46513
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDMS0310AS, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDMS0310AS meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPI040N06N3GXKSA1
Diodes Incorporated
DMP21D2UFA-7B
Texas Instruments
CSD23382F4
Rectron USA
RM75N60T2
Vishay Siliconix
IRFR120TRLPBF-BE3
Microchip Technology
APT6010JFLL
Rohm Semiconductor
RV3CA01ZPT2CL
IXYS
IXFN130N30
Diodes Incorporated
DMT69M8LFV-7
onsemi