FDMC86116LZ
onsemi
onsemi
MOSFET N-CH 100V 3.3A/7.5A 8MLP
$1.05
Available to order
Reference Price (USD)
3,000+
$0.35090
6,000+
$0.32670
15,000+
$0.31460
30,000+
$0.30800
Exquisite packaging
Discount
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Experience the power of FDMC86116LZ, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDMC86116LZ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 103mOhm @ 3.3A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 19W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (3.3x3.3)
- Package / Case: 8-PowerWDFN
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