FDMA8878
onsemi
onsemi
MOSFET N-CH 30V 9A/10A 6MICROFET
$1.74
Available to order
Reference Price (USD)
3,000+
$0.41888
6,000+
$0.39794
15,000+
$0.38298
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FDMA8878, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-WDFN Exposed Pad
Related Products
STMicroelectronics
STP14NF10
Infineon Technologies
BG5120KE6327
Rohm Semiconductor
RSS070N05HZGTB
onsemi
NTD80N02-1G
Infineon Technologies
IRLML2402TRPBF
Taiwan Semiconductor Corporation
TSM036N03PQ56 RLG
Infineon Technologies
IPB020N08N5ATMA1
Rohm Semiconductor
RF4C050APTR
Vishay Siliconix
IRF720SPBF
onsemi