IPB020N08N5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 120A D2PAK
$6.15
Available to order
Reference Price (USD)
1,000+
$2.35389
2,000+
$2.23620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IPB020N08N5ATMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IPB020N08N5ATMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 208µA
- Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Rohm Semiconductor
RF4C050APTR
Vishay Siliconix
IRF720SPBF
onsemi
SCH1430-TL-H
Infineon Technologies
IPB80N04S303ATMA1
Harris Corporation
RFD20N03SM9A
Nexperia USA Inc.
BUK7S2R0-40HJ
Nexperia USA Inc.
PMZB550UNEYL
Vishay Siliconix
IRFI730GPBF
Infineon Technologies
IPB80P04P4L08ATMA1
IXYS