FDD5N60NZTM
onsemi
onsemi
MOSFET N-CH 600V 4A DPAK
$1.24
Available to order
Reference Price (USD)
2,500+
$0.45885
5,000+
$0.43717
12,500+
$0.42169
25,000+
$0.41944
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with FDD5N60NZTM, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDD5N60NZTM meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Rohm Semiconductor
RQ5E030AJTCL
onsemi
2SK536-MTK-TB-E
Nexperia USA Inc.
PSMN016-100PS,127
Nexperia USA Inc.
PMZ200UNEYL
Infineon Technologies
IRFB7530PBF
onsemi
NTMYS1D2N04CLTWG
onsemi
FDME905PT
Infineon Technologies
AUIRFR8405TRL
Toshiba Semiconductor and Storage
T2N7002BK,LM
Vishay Siliconix