FDC608PZ
onsemi
onsemi
MOSFET P-CH 20V 5.8A SUPERSOT6
$0.59
Available to order
Reference Price (USD)
3,000+
$0.22745
6,000+
$0.21277
15,000+
$0.19810
30,000+
$0.18783
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDC608PZ by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDC608PZ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
IPI60R299CPXKSA1
Infineon Technologies
AUIRFSL8408
Vishay Siliconix
SI3443CDV-T1-E3
Infineon Technologies
IPA60R280P6XKSA1
Micro Commercial Co
MCMN2012A-TP
Panasonic Electronic Components
SK8403190L
Vishay Siliconix
SI4420BDY-T1-GE3
Microchip Technology
TP0620N3-G
onsemi
FDB2532-F085
Microchip Technology