FDB12N50FTM-WS
onsemi
onsemi
MOSFET N-CH 500V 11.5A D2PAK
$1.88
Available to order
Reference Price (USD)
800+
$1.08858
1,600+
$1.00342
2,400+
$0.93791
5,600+
$0.90516
Exquisite packaging
Discount
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onsemi presents FDB12N50FTM-WS, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FDB12N50FTM-WS delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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