PMG45UN,115
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 3A 6TSSOP
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of PMG45UN,115, a premium Transistors - FETs, MOSFETs - Single from NXP USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, PMG45UN,115 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 55mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 375mW (Ta), 4.35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSSOP
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Alpha & Omega Semiconductor Inc.
AOI294A
Alpha & Omega Semiconductor Inc.
AOT480L
Alpha & Omega Semiconductor Inc.
AOB27S60L
Infineon Technologies
IPD65R1K4CFDATMA1
Vishay Siliconix
SI4896DY-T1-GE3
Vishay Siliconix
IRFR214PBF
Panjit International Inc.
PJA3438_R1_00001
onsemi
NDF08N60ZH
IXYS
IXTA4N65X2
Vishay Siliconix