FD-DF80R12W1H3_B52
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 40A 215W
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Reference Price (USD)
24+
$35.99333
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Infineon Technologies's FD-DF80R12W1H3_B52 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 215 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 235 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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