FZ1200R33KL2CB5NOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 3300V 2300A
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Infineon Technologies's FZ1200R33KL2CB5NOSA1 IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Infineon Technologies for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): 3300 V
- Current - Collector (Ic) (Max): 2300 A
- Power - Max: 14500 W
- Vce(on) (Max) @ Vge, Ic: 3.65V @ 15V, 1200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 145 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
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