FCPF165N65S3L1
onsemi
onsemi
MOSFET N-CH 650V 19A TO220F-3
$2.47
Available to order
Reference Price (USD)
1+
$2.93000
10+
$2.65100
100+
$2.14540
500+
$1.68536
1,000+
$1.40934
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with FCPF165N65S3L1 by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, FCPF165N65S3L1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F-3
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
BUZ100S-E3045A
Microchip Technology
APT30N60BC6
Infineon Technologies
IPP60R190C6XKSA1
onsemi
NTHS2101PT1
Vishay Siliconix
SIHH070N60EF-T1GE3
Rohm Semiconductor
RQ3E075ATTB
Texas Instruments
CSD18512Q5B
STMicroelectronics
STL40N10F7
Toshiba Semiconductor and Storage
TK160F10N1,LXGQ
Vishay Siliconix