RQ3E075ATTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CHANNEL 30V 18A 8HSMT
$1.29
Available to order
Reference Price (USD)
3,000+
$0.43120
Exquisite packaging
Discount
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Experience the power of RQ3E075ATTB, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RQ3E075ATTB is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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