FCMT199N60
onsemi
onsemi
MOSFET N-CH 600V 20.2A POWER88
$3.74
Available to order
Reference Price (USD)
3,000+
$1.38105
6,000+
$1.32990
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance FCMT199N60 from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, FCMT199N60 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Power88
- Package / Case: 4-PowerTSFN
Related Products
Nexperia USA Inc.
BUK7635-55A,118
Vishay Siliconix
SIR804DP-T1-GE3
Renesas Electronics America Inc
H5N2513PL-E
Wolfspeed, Inc.
C2M1000170J
Microchip Technology
APT18M100B
Toshiba Semiconductor and Storage
TK100E10N1,S1X
STMicroelectronics
STN3N40K3
Alpha & Omega Semiconductor Inc.
AOV15S60
Nexperia USA Inc.
NX7002BKR
STMicroelectronics