Shopping cart

Subtotal: $0.00

APT18M100B

Microchip Technology
APT18M100B Preview
Microchip Technology
MOSFET N-CH 1000V 18A TO247
$9.88
Available to order
Reference Price (USD)
1+
$11.48000
10+
$10.32800
100+
$8.49150
500+
$7.11450
1,000+
$6.42600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 700mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4845 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3

Related Products

Toshiba Semiconductor and Storage

TK100E10N1,S1X

STMicroelectronics

STN3N40K3

Alpha & Omega Semiconductor Inc.

AOV15S60

Nexperia USA Inc.

NX7002BKR

STMicroelectronics

STP11NM80

Infineon Technologies

IPSA70R900P7SAKMA1

Toshiba Semiconductor and Storage

TK60S06K3L(T6L1,NQ

STMicroelectronics

STI33N60M2

Nexperia USA Inc.

BSP250,115

Nexperia USA Inc.

BUK9Y22-100E,115

Top