FCD850N80Z
onsemi
onsemi
MOSFET N-CH 800V 6A DPAK
$2.44
Available to order
Reference Price (USD)
2,500+
$0.70514
5,000+
$0.67183
12,500+
$0.64804
Exquisite packaging
Discount
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Enhance your circuit performance with FCD850N80Z, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FCD850N80Z for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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